Fabrication of <i>a</i>-Si: H/<i>a</i>-AIO Superlattice by Excimer Laser MOCVD

Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing

Excimer laser fabrication of polymer microfluidic devices

Silicon has been a primary material for fabrication of microelectromechanical systems ~microfluidic devices in MEMS! for several decades. This is due to the fact that the MEMS techniques were derived from those used for microfabrication in the semiconductor industry. These techniques are well developed, and can be readily applied for silicon based MEMS fabrication. Nowadays, alternative manufac...

Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metalorganic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8mm 5mm, XRD GaN (0 0 0 2) full-width at half-...

control of the optical properties of nanoparticles by laser fields

در این پایان نامه، درهمتنیدگی بین یک سیستم نقطه کوانتومی دوگانه(مولکول نقطه کوانتومی) و میدان مورد مطالعه قرار گرفته است. از آنتروپی ون نیومن به عنوان ابزاری برای بررسی درهمتنیدگی بین اتم و میدان استفاده شده و تاثیر پارامترهای مختلف، نظیر تونل زنی(که توسط تغییر ولتاژ ایجاد می شود)، شدت میدان و نسبت دو گسیل خودبخودی بر رفتار درجه درهمتنیدگی سیستم بررسی شده اشت.با تغییر هر یک از این پارامترها، در...

GaN Based Nanomaterials Fabrication with Anodic Aluminium Oxide by MOCVD

A highly self-ordered hexagonal array of cylindrical pores has been fabricated by anodizing a thin film of Al on substrate and subsequent growth of GaN and InGaN in these nanoholes has been performed. This AAO templatebased synthesis method provides a low cost process to fabricate GaN-based nanomaterials fabrication.